Hitoshi Shimizu , Kouji Kumada , Seiji Uchiyama , Akihiko Kasukawa
Long wavelength-GaInNAsSb SQW lasers that include a small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE) on a GaAs substrate for application with peltier-free devices of access networks and vertical cavity surface emitting lasers (VCSELs). The GaInNAsSb lasers oscillated under CW operation at 1.258 µm-rangem at room temperature. A low CW threshold current of 12.4 mA and a high characteristic temperature (T0) of 157 K were obtained for GaInNAsSb lasers, which is the best result for GaInNAs-based narrow stripe lasers. Further, GaInNAsSb laser oscillated under CW conditions of over 100oC. A low CW threshold current of 6.3 mA and a high characteristic temperature (T0) of 256 K were obtained for GaInAsSb lasers, which is also the best result for 1.2 µm-range highly strained GaInAs-based narrow stripe lasers. As a result, GaInNAsSb lasers are very promising for realizing pertier-free access networks and VCSELs.