Kozue Yabusaki and Hirokazu Sasaki
In recent years the FIB technique has been widely used for specimen preparation in TEM observation and AES analysis, increasing demand for micro-analysis of semiconductor devices. Compared to the conventional process consisting of mechanical polishing and Ar ion milling, the FIB technique has several advantages: rapid process, preventing damage caused by mechanical polishing, and cutting out microstructure parts. However, there are various problems such as detection of large amounts of Ga from the ion source and formation of a damaged layer on the surface. We have developed FIB specimen preparation techniques to obtain valuable data for TEM and AES in consideration of these features of FIB processing.