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Furukawa Review No.19

Extremely Low Threshold 1.3-µm InAsP n-Type Modulation Doped MQW Lasers

Hitoshi Shimizu, Kouji Kumada, Nobumitsu Yamanaka, Norihiro Iwai, Tomokazu Mukaihara, Akihiko Kasukawa

Abstract

A semiconductor laser with a low threshold current emitting at 1.3 µm wavelength is a key component for access networks and high-density parallel optical interconnections. A very low CW threshold current of 0.9 mA has been obtained at room temperature for lasers grown by gas-source molecular-beam epitaxy, which is the lowest value grown by any kind of molecular-beam epitaxy in the long wavelength region. Both the reduction of the threshold current and the carrier lifetime lead to the reduction of the turn-on delay time by about 30%. The 1.3 µm InAsP strained MQW lasers using n-type modulation doping with very low power consumption and small turn-on delay time are very attractive for laser array application in high density parallel optical interconnection systems.

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