Hirokazu Sasaki , Shinya Ootomo , Takeyoshi Matsuda , Hirotatsu Ishii
Abstract
It is well known that carrier distribution in semiconductors can be observed by using electron holography, and many such studies on Si semiconductors have been reported. In this paper, sample preparation and observation techniques are optimized with the aim of improving the observation technology of carrier distribution in compound semiconductors. The authors have been successful in making clear observation of the p-n junction in GaAs semiconductor, as well as in clearly distinguishing between the n+ layer and n- layer. The techniques developed here are applicable to various semiconductor products such as lasers, holding promise for contributing to performance and reliability improvements.
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