Hirokazu Sasaki, Shinya Otomo, Ryuichiro Minato, Junji Yoshida
The observation of the Gallium arsenide (GaAs) model specimen and the analysis of the semiconductor laser diode were carried out by using the electron holography, which is one of the methods of the transmission electron microscope, and Lorentz microscopy. In the observation using the electron holography, not only pn junction but also interfaces which are in different dopant concentration regions of the 1x1019 and 1x1018 cm-3 regions and the 1x1018 and 1x1017 cm-3 regions could be observed. Then, the analysis example for the semiconductor laser diode was introduced and described that these methods have been used practically.
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