Achieved 800mW output with a pump laser for C-band Raman amplifiers
- Started sample shipments of the FRL1441 Series pump laser with an optical output of 700mW -
- Achieved 800mW output at a low power consumption of approximately 16W with a pump laser for C-band Raman amplifiers
- Started sample shipments of a pump laser for Raman amplifiers that applies this technology to realize an industry leading optical output of 700mW
- By increasing the output of the pump laser, a key device for Raman amplifiers, contributes to the development of large capacity communications networks with a transmission speed exceeding 800Gbps and even reaching 1.6Tbps
Furukawa Electric Co., Ltd. (Head office: 2-6-4 Otemachi, Chiyoda-ku, Tokyo; President: Keiichi Kobayashi) achieved 800mW output at a low power consumption of approximately 16W with a pump laser for C-band Raman amplifiers. By applying this technology, we developed the FRL1441 Series (Fig. 1) pump laser for Raman amplifiers that has an industry leading optical output of 700mW. We started sample shipments of this pump laser in August of this year.
Background
Directed at increasing the capacity of medium to long distance optical communication networks, which is essential to the practical implementation of 5G, technology development is progressing toward increasing the transmission speed from the current 100-400Gbs to 800Gbps and even 1.6 Tbps in the future. These faster transmission speeds require high performance Raman amplifiers to supplement OSNR (Optical Signal to Noise Ratio, note 1) degradation of the signal receiving side.
In 1989, NTT announced of the world’s first optical amplifier using a semiconductor light source (optical output of the light source was 40mW,note 2). Since then, for over 20 years, Furukawa Electric has contributed to advances in optical communication as a leading manufacturer of pump lasers, a key component of Raman amplifiers. To date, we have provided a pump laser for the C-band with an industry leading optical output of 600mW, and we have continued to work to realize higher output performance.
Details
Utilizing the InP (Indium Phosphide, note 3) semiconductor chip technology and optical module assembly technology accumulated over the years, we achieved an industry leading 800mW output with a pump laser for Raman amplifiers (Fig. 2). In this new development, we increased the efficiency by optimizing the cavity length of the semiconductor laser chip and structure of the active layer and also realized high optical coupling efficiency to the optical fiber, which is an important technology in the laser pump assembly. Utilizing this technology, we developed the FRL1441 Series pump laser for Raman amplifiers that has an industry leading optical output of 700mW and started sample shipments of this pump laser in August of this year.
This new development is expected to improve OSNR in long distance transmission following further increases to transmission speed and data volume, as well as lead to smaller Raman amplifiers and lower pump laser power consumption (by 37% compared to existing Furukawa Electric pump lasers) through a reduction to the number of pump lasers used in current systems (for example, reducing the number of pump lasers for the same wavelength from 2 to 1). Going forward, we will continue development aimed at achieving increased performance and work to commercialize a pump laser with an optical output exceeding 800mW.
The current development results will be announced on October 18 at the ISLC (International Semiconductor Laser Conference) in Matsue City, Shimane Prefecture.
As a leading company in the laser business,Furukawa Electric will continue to research, develop and commercialize high performance semiconductor laser light sources and contribute to realizing a truly prosperous and sustainable society through advancements in optical communication.
Main characteristics
Model | FRL1441 Series | |||
---|---|---|---|---|
Optical output (mW) | 800 | 700 | 600 | 500 |
Power consumption (W) | Typ.16 | Max.14 | Max.10 | Max.6 |
Drive conditions | Ts=35℃、Tc=70℃(EOL) | |||
Bandwidth | C-band |
(note 1)OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio
(note 2)Appl. Phys. Lett. 54, 295 (1989), 295 Efficient Er3+‐doped optical fiber amplifier pumped by a 1.48 μm InGaAsP laser diode, IEICE PIONEERS WEBINAR series no.1, EDFA “A Long Adventuresome Trip” by Masataka Nakazawa and others
(note 3)InP (Indium Phosphide): A III-V compound semiconductor that is used in the manufacture of laser diode chips and high speed transistors
Furukawa Electric Group’s efforts towards the SDGs
Based on the “Sustainable Development Goals (SDGs)” adopted by the United Nations, Furukawa Electric Group has formulated the “Furukawa Electric Group Vision 2030” which sets the year 2030 as its target and is advancing efforts with the aim to “Build a sustainable world and make people’s life safe, peaceful and rewarding, Furukawa Electric Group will create solutions for the new generation of global infrastructure combining information, energy and mobility.” Toward the achievement of our Vision 2030, we will take open, agile, and innovative approaches to promote ESG management that aims to increase corporate value over the medium to long term and will contribute to the achievement of the SDGs.